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NTLJD3119C
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
N
P
N
P
V GS = 0 V
I D = 250 m A
I D = ? 250 m A
20
? 20
10.4
9.95
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
N
P
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ? 16 V
T J = 25 ° C
1.0
? 1.0
m A
N
P
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ? 16 V
T J = 85 ° C
10
? 10
Gate ? to ? Source Leakage Current
I GSS
N
V DS = 0 V, V GS = ± 8.0 V
± 100
nA
ON CHARACTERISTICS (Note 5)
P
V DS = 0 V, V GS = ± 8.0 V
± 100
Gate Threshold Voltage
V GS(TH)
N
P
V GS = V DS
I D = 250 m A
I D = ? 250 m A
0.4
? 0.4
0.7
? 0.7
1.0
? 1.0
V
Gate Threshold Temperature
Coefficient
V GS(TH) /T J
N
P
? 3.0
2.44
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
N
V GS = 4.5 V , I D = 3.8 A
37
65
m W
P
N
P
N
P
V GS = ? 4.5 V , I D = ? 4.1 A
V GS = 2.5 V , I D = 2.0 A
V GS = ? 2.5 V, I D = ? 2.0 A
V GS = 1.8 V , I D = 1.7 A
V GS = ? 1.8 V, I D = ? 1.6 A
75
46
101
65
150
100
85
135
120
200
Forward Transconductance
g FS
N
V DS = 10 V, I D = 1.7 A
4.2
S
P
CHARGES, CAPACITANCES AND GATE RESISTANCE
V DS = ? 5.0 V , I D = ? 2.0 A
3.1
Input Capacitance
C ISS
N
V DS = 10 V
271
pF
P
V DS = ? 10 V
531
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
N
P
N
f = 1.0 MHz, V GS = 0 V
V DS = 10 V
V DS = ? 10 V
V DS = 10 V
72
91
43
P
V DS = ? 10 V
56
Total Gate Charge
Q G(TOT)
N
V GS = 4.5 V, V DS = 10 V, I D = 3.8 A
3.7
nC
P
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 2.0 A
5.5
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
N
P
N
P
N
P
V GS = 4.5 V, V DS = 10 V, I D = 3.8 A
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 2.0 A
V GS = 4.5 V, V DS = 10 V, I D = 3.8 A
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 2.0 A
V GS = 4.5 V, V DS = 10 V, I D = 3.8 A
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 2.0 A
0.3
0.7
0.6
1.0
1.0
1.4
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